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Surface characterization of quinhydrone–methanol and iodine–methanol passivated silicon substrates using X‐ray photoelectron spectroscopy
Author(s) -
Chhabra Bhumika,
Weiland Conan,
Opila Robert L.,
Honsberg Christiana B.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026101
Subject(s) - passivation , x ray photoelectron spectroscopy , silicon , methanol , analytical chemistry (journal) , materials science , surface layer , surface modification , chemistry , layer (electronics) , chemical engineering , nanotechnology , organic chemistry , optoelectronics , engineering
Abstract Hydrogen‐terminated silicon substrates were passivated with quinhydrone–methanol (QHY/ME) and iodine–methanol (I 2 /ME), and the chemical changes occurring at the surface were investigated using X‐ray photoelectron spectroscopy (XPS). The XPS surface studies demonstrate that QHY/ME passivation provides reduced oxidation, less carbon contamination, and a chemically inert surface. Electrical characterization also demonstrates higher minority carrier lifetimes of QHY/ME passivated substrates as compared to I 2 /ME passivated substrates. The quality of surface treatment was also characterized using the contact angle measurement, which confirms the presence of a hydrophobic organic layer on the surface after QHY/ME passivation.Si 2p XPS spectra of the QHY/ME, I 2 /ME samples, and H‐terminated silicon. With a peak at 102.9 eV for I 2 /ME, it is evident that it provides poor surface passivation than QHY/ME where no surface oxidation is observed.