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Optical properties of InN grown on templates with controlled surface polarities
Author(s) -
Kirste Ronny,
Wagner Markus R.,
Schulze Jan H.,
Strittmatter Andre,
Collazo Ramon,
Sitar Zlatko,
Alevli Mustafa,
Dietz Nikolaus,
Hoffmann Axel
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026086
Subject(s) - raman spectroscopy , sapphire , materials science , photoluminescence , polar , reciprocal lattice , substrate (aquarium) , luminescence , optoelectronics , crystal (programming language) , analytical chemistry (journal) , optics , chemistry , laser , diffraction , oceanography , physics , chromatography , astronomy , computer science , programming language , geology
The structural and optical properties of InN layers grown on GaN/sapphire templates with controlled Ga‐/N‐polar surfaces are investigated. Raman spectroscopy and XRD reciprocal space map analysis suggest that the InN layers were grown strain free with a high crystal quality. A line shape analysis of the A 1 (LO) Raman mode yields to a decreasing carrier concentration for the sample grown on Ga‐polar substrate. Low temperature photoluminescence measurements exhibit a shift to lower energies of the luminescence maximum for the sample grown on Ga‐polar GaN probably due to a reduced carrier concentration and thus, a decreased Burstein–Moss shift. Following this, we demonstrate that the use of polarity controlled GaN/sapphire substrates leads to unstrained layers with good structural and optical properties.
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