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(In)AlGaN deep ultraviolet light emitting diodes with optimized quantum well width
Author(s) -
Kolbe Tim,
Sembdner Toni,
Knauer Arne,
Kueller Viola,
Rodriguez Hernan,
Einfeldt Sven,
Vogt Patrick,
Weyers Markus,
Kneissl Michael
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026046
Subject(s) - light emitting diode , electroluminescence , optoelectronics , quantum well , materials science , ultraviolet , diode , quantum confined stark effect , quantum efficiency , full width at half maximum , optics , physics , laser , nanotechnology , layer (electronics)
The effect of the quantum well (QW) width on the light output and efficiency of ultraviolet (UV) light emitting diodes (LEDs) has been investigated. The carrier injection in the devices is simulated and compared with electroluminescence (EL) measurements. The light output power depends clearly on the QW thickness. The highest output power has been found for the LEDs with a QW thickness of 2.2 nm. This effect is attributed to the trade‐off between electron and hole wave function overlap and carrier concentration in the active region which are triggered by the quantum confined Stark effect.