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Capacitance–voltage and impedance‐spectroscopy characteristics of nanoplate EISOI capacitors
Author(s) -
Abouzar Maryam H.,
Moritz Werner,
Schöning Michael J.,
Poghossian Arshak
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201001211
Subject(s) - capacitance , equivalent series resistance , materials science , dielectric spectroscopy , capacitor , electrical impedance , capacitive sensing , equivalent circuit , voltage , electrolyte , insulator (electricity) , optoelectronics , electrical engineering , electrode , chemistry , electrochemistry , engineering
Frequency‐dependent capacitance–voltage ( C – V ) and impedance‐spectroscopy characteristics of nanoplate capacitive field‐effect electrolyte‐insulator‐silicon‐on‐insulator (EISOI) structures with various thicknesses (30, 60 and 350 nm) of the top p‐Si layer are investigated for the first time. The frequency‐dependent C – V curves of EISOI structures show an unusual behaviour, which significantly differs from that of conventional EIS structures. Due to the large series resistance of the nanoplate top Si, the C – V curves of the EISOI structures show stronger frequency dependence in the accumulation region. In addition, C – V curves show typical low‐frequency behaviour even at higher frequencies (up to 8 kHz). An equivalent circuit of an EISOI structure is discussed taking into account the series resistance of the nanoplate top Si.