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Ridge‐type AlGaInN‐based laser diode structure by selective regrowth
Author(s) -
Zhao Wei,
Detchprohm Theeradetch,
Hou Wenting,
Li Yufeng,
Wetzel Christian
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201001191
Subject(s) - cathodoluminescence , materials science , optoelectronics , ridge , diode , planar , laser , epitaxy , metalorganic vapour phase epitaxy , laser diode , excitation , optics , luminescence , nanotechnology , geology , electrical engineering , paleontology , computer graphics (images) , physics , layer (electronics) , engineering , computer science
We report the development of a novel ridge‐type AlGaInN‐based laser diode structure fabricated by a metal organic vapor phase epitaxial regrowth method. The selective‐area regrowth of AlGaN was optimized and compared with regular planar growth. An AlN fraction of 13% in the regrown ridge was concluded from the cathodoluminescence spectrum. The laser diode structure showed superluminescence at 465 nm under optical excitation. Under electrical excitation a super‐linear increase of the light output power was observed.