Ridge‐type AlGaInN‐based laser diode structure by selective regrowth | Zendy

Zhao Wei | Zendy; Detchprohm Theeradetch | Zendy; Hou Wenting | Zendy; Li Yufeng | Zendy; Wetzel Christian | Zendy

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Ridge‐type AlGaInN‐based laser diode structure by selective regrowth

Author(s) -

Zhao Wei,

Detchprohm Theeradetch,

Hou Wenting,

Li Yufeng,

Wetzel Christian

Publication year - 2011

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.201001191

Subject(s) - cathodoluminescence , materials science , optoelectronics , ridge , diode , planar , laser , epitaxy , metalorganic vapour phase epitaxy , laser diode , excitation , optics , luminescence , nanotechnology , geology , electrical engineering , paleontology , computer graphics (images) , physics , layer (electronics) , engineering , computer science

We report the development of a novel ridge‐type AlGaInN‐based laser diode structure fabricated by a metal organic vapor phase epitaxial regrowth method. The selective‐area regrowth of AlGaN was optimized and compared with regular planar growth. An AlN fraction of 13% in the regrown ridge was concluded from the cathodoluminescence spectrum. The laser diode structure showed superluminescence at 465 nm under optical excitation. Under electrical excitation a super‐linear increase of the light output power was observed.

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