Premium
Metal‐face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy
Author(s) -
Guo Jia,
Cao Yu,
Lian Chuanxin,
Zimmermann Tom,
Li Guowang,
Verma Jai,
Gao Xiang,
Guo Shiping,
Saunier Paul,
Wistey Mark,
Jena Debdeep,
Xing Huili Grace
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201001177
Subject(s) - ohmic contact , transconductance , materials science , molecular beam epitaxy , optoelectronics , high electron mobility transistor , transistor , epitaxy , metal , contact resistance , nanotechnology , electrical engineering , layer (electronics) , metallurgy , voltage , engineering
Ohmic regrowth by molecular beam epitaxy (MBE) has been investigated for metal‐face InAlN/AlN/GaN high electron mobility transistors (HEMTs) for the first time. Using SiO 2 mask n + ‐GaN was regrown in the source/drain region while deposition on the mask was lifted off in buffered HF after regrowth. The lowest contact resistance measured was 0.40 ± 0.23 Ω mm by the transmission line method (TLM) in this initial study. The peak output current density of 1.25 A/mm at V gs = 3 V and extrinsic transconductance of 264 mS/mm at V ds = 5 V were observed in 500‐nm gate length InAlN/Al/GaN HEMTs passivated by SiN with regrowth contacts.