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Thermal resistance, gain, and antiguiding factor of GaN‐based cyan laser diodes
Author(s) -
Scheibenzuber W. G.,
Schwarz U. T.,
Lermer T.,
Lutgen S.,
Strauss U.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201001162
Subject(s) - materials science , diode , optoelectronics , laser , thermal resistance , cyan , blue laser , semiconductor laser theory , optics , laser diode , thermal , physics , meteorology
We present a highly precise method to determine the thermal resistance and the antiguiding factor of (Al,In)GaN laser diodes. Knowing the thermal resistance, we are able to exclude thermal effects and study the charge carrier density dependence of the optical gain and the refractive index. From these properties we determine the antiguiding factor. The method is applied to 489 nm (Al,In)GaN laser diodes with a high charge carrier density in the active region. For these laser diodes we find a high antiguiding factor of 10 ± 1 at the laser wavelength.Schematic drawing of the heat transport in a Fabry–Perot‐type ridge laser diode.