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Free electron properties and hydrogen in InN grown by MOVPE
Author(s) -
Darakchieva V.,
Xie M.Y.,
Rogalla D.,
Becker H.W.,
Lorenz K.,
Alves E.,
Ruffenach S.,
Moret M.,
Briot O.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201001151
Subject(s) - metalorganic vapour phase epitaxy , hydrogen , annealing (glass) , materials science , doping , impurity , electron , dislocation , crystallography , condensed matter physics , chemistry , nanotechnology , optoelectronics , composite material , epitaxy , physics , organic chemistry , layer (electronics) , quantum mechanics
Abstract In this work we present a comprehensive study on the hydrogen impurities, free electron, and structural properties of MOVPE InN films with state‐of‐the‐art quality. We find a correlation between the decrease of free electron concentration and the reduction of bulk hydrogen in the films upon thermal annealing, while no changes in the dislocation densities and strain are observed. Our results suggest that hydrogen is a major source for the unintentional n‐type doping in MOVPE InN.