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AlGaN/GaN FET for DNA hybridization detection
Author(s) -
Wang Yuji,
Lu Wu
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201001090
Subject(s) - x ray photoelectron spectroscopy , monolayer , dna , materials science , dna–dna hybridization , field effect transistor , transistor , fluorescence , optoelectronics , molecule , analytical chemistry (journal) , chemistry , nanotechnology , optics , nuclear magnetic resonance , physics , biochemistry , organic chemistry , voltage , quantum mechanics , chromatography
Abstract We present the application of AlGaN/GaN field effect transistor (FET) for detection of biomolecular interactions, demonstrated by a DNA hybridization process. We immobilized a monolayer of single strand probe DNAs on the active gate surface of an AlGaN/GaN FET device and monitored the drain current during the affinity binding process with the presence of both matched and mismatched DNA molecules. The immobilization quality was first studied by X‐ray photoelectron spectroscopy (XPS) and fluorescence images. We then observed from the time‐resolved electrical measurement that significant and specific signals were solely upon the hybridization between the probe DNAs and the matched DNAs. The I DS – V DS characteristics of devices before and after hybridization were compared with a notable shift indicating the binding of DNA molecules.