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Homoepitaxial growth of AlN on nitrided sapphire by LPE method using Ga–Al binary solution
Author(s) -
Adachi Masayoshi,
Maeda Kazuo,
Tanaka Akikazu,
Kobatake Hidekazu,
Fukuyama Hiroyuki
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201001014
Subject(s) - sapphire , nitriding , materials science , scanning electron microscope , transmission electron microscopy , layer (electronics) , epitaxy , substrate (aquarium) , flux (metallurgy) , analytical chemistry (journal) , optoelectronics , laser , optics , metallurgy , composite material , nanotechnology , chemistry , chromatography , oceanography , physics , geology
A novel liquid phase epitaxy method was proposed for growing an AlN layer using Ga–Al binary flux under normal pressure. In this method, nitrogen gas was injected into the flux. Then a nitrided sapphire substrate was used as a template to achieve homoepitaxial growth. Advantages of using a nitrided sapphire substrate were demonstrated; the optimum flux composition was investigated. We grew 1‐µm‐thick c ‐axis oriented AlN layer for 5 h at 1573 K. The full width at half maximum values of X‐ray rocking curves for AlN (0002) and (10−12) were, respectively, 50 and 590 arcsec. Moreover, the surface morphology and interfacial structure were observed using a scanning electron microscope, laser microscope, and high‐resolution transmission electron microscope.