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High nitrogen pressure solution growth of bulk GaN in “feed‐seed” configuration
Author(s) -
Boćkowski M.,
Grzegory I.,
Łucznik B.,
Sochacki T.,
Kryśko M.,
Strąk P.,
Dzięcielewski I.,
LitwinStaszewska E.,
Porowski S.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201000981
Subject(s) - bowing , materials science , nitrogen , substrate (aquarium) , growth rate , plane (geometry) , gallium nitride , crystallography , optoelectronics , chemistry , composite material , mathematics , biology , geometry , ecology , philosophy , theology , organic chemistry , layer (electronics)
In this paper the growth and physical properties of HNPS‐GaN crystallized in “feed‐seed” configuration is described. The idea of this configuration is based on the conversion of the free standing HVPE‐GaN crystals to the free standing HNPS‐GaN. The influence of the c‐plane bowing in the initial substrate on quality, rate, and mode of growth from solution is analyzed.