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Different behavior of semipolar and polar InGaN/GaN quantum wells: Pressure studies of photoluminescence
Author(s) -
Staszczak G.,
Suski T.,
Khachapuridze A.,
Perlin P.,
Funato M.,
Kawakami Y.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201000975
Subject(s) - photoluminescence , quantum well , hydrostatic pressure , materials science , polar , optoelectronics , laser , electric field , condensed matter physics , optics , physics , thermodynamics , quantum mechanics
Photoluminescence of (11–22) semipolar and (0001) polar InGaN/GaN quantum wells (QWs) was studied as a function of exciting laser intensity and hydrostatic pressure. A large photoluminescence energy shift with pressure (d E PL /d p ) was observed in semipolar QWs comparing to polar ones. In addition, a negligible blue‐shift as a function of exciting laser intensity gives a strong argument for the absence of a built‐in electric field in the studied semipolar structures. These results suggest that In‐segregation effects play an important role in semipolar QWs.