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Micro‐electroluminescence of cyan InGaN‐based multiple quantum well structures
Author(s) -
Meyer Tobias,
Peter Matthias,
Danhof Julia,
Schwarz Ulrich T.,
Hahn Berthold
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201000972
Subject(s) - electroluminescence , cyan , photoluminescence , materials science , sapphire , emission intensity , optoelectronics , quantum well , indium , light emitting diode , wavelength , intensity (physics) , microscopy , light emission , optics , nanotechnology , physics , laser , layer (electronics)
Micro‐electroluminescence measurements were performed on multiple quantum well samples grown on sapphire and GaN substrates with emission wavelength 495 nm. Meandering structures were found both in intensity and peak energy. Areas with higher emission intensity had lower energy, which is a hint for carrier redistribution within the quantum wells. A comparison between atomic force microscopy and photoluminescence microscopy revealed that V‐shaped pits reside in regions with low intensity and are associated with higher emission energy. Small intensity and emission energy variations were also found in defect‐free areas and are probably caused by indium content or quantum well thickness fluctuations leading to higher carrier density in regions with low potential energy.