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Development and characterization of EIS structures based on SiO 2 micropillars and pores before and after their functionalization with phosphonate films
Author(s) -
Hofmann Martina,
CattaniScholz Anna,
Mallorqui Anna Dalmau,
Sharp Ian D.,
Fontcuberta i Morral Anna,
Moreno i Codinachs Lia
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201000961
Subject(s) - x ray photoelectron spectroscopy , materials science , surface modification , fabrication , characterization (materials science) , nanotechnology , substrate (aquarium) , dielectric spectroscopy , electrolyte , pillar , semiconductor , atomic layer deposition , chemical engineering , optoelectronics , layer (electronics) , chemistry , electrode , structural engineering , pathology , geology , engineering , electrochemistry , medicine , oceanography , alternative medicine
In this work electrolyte–insulator–semiconductor (EIS) structures based on lithographically fabricated Si–SiO 2 micropillars and pores are studied. The samples are characterized by means of impedance spectroscopy (IS) and they are compared to samples with a planar SiO 2 layer on a Si substrate in order to determine whether the increase in active surface is directly related to an increase in sensitivity of the device. Our initial results confirm this question in the case of the pillar samples but not for the pore ones, most likely due to some fabrication issues that must be improved. Afterwards the SiO 2 surface is functionalized with posphonates and the influence of the modification is studied using IS. Also, the stability and limits of applicability of the functionalized devices is studied. Analysis with X‐ray photoelectron spectroscopy (XPS) is used to show that the deposition of phosphonates was successful.