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Characterization of dislocation arrays in AlN single crystals grown by PVT
Author(s) -
Dalmau Rafael,
Moody Baxter,
Xie Jinqiao,
Collazo Ramón,
Sitar Zlatko
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201000957
Subject(s) - dislocation , materials science , etch pit density , crystallography , etching (microfabrication) , diffraction , characterization (materials science) , grain boundary , optoelectronics , optics , microstructure , composite material , nanotechnology , chemistry , layer (electronics) , physics
The density and distribution of extended defects in AlN single crystals grown by physical vapor transport (PVT) was studied by bright field and polarized light microscopy, defect‐selective etching, and high resolution X‐ray diffraction (HRXRD). Etch pits associated with dislocation arrays forming low angle grain boundaries (LAGB) were observed and two types of LAGB were identified. Reduction of LAGB in AlN grown under reduced radial temperature gradients, as estimated by simulation of the growth cell, was demonstrated.