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Study of etching‐induced damage in GaN by hard X‐ray photoelectron spectroscopy
Author(s) -
Narita Tetsuo,
Kikuta Daigo,
Takahashi Naoko,
Kataoka Keita,
Kimoto Yasuji,
Uesugi Tsutomu,
Kachi Tetsu,
Sugimoto Masahiro
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201000952
Subject(s) - x ray photoelectron spectroscopy , band bending , etching (microfabrication) , materials science , gallium nitride , photoelectric effect , layer (electronics) , bending , analytical chemistry (journal) , surface layer , inductively coupled plasma , spectroscopy , nitride , plasma , optoelectronics , chemistry , nanotechnology , composite material , nuclear magnetic resonance , physics , chromatography , quantum mechanics
We carried out nondestructive measurements of the depth profile of etching‐induced damage in p‐type gallium nitride (p‐GaN), in particular surface band bending, using Hard X‐ray Photoelectron Spectroscopy (HAX‐PES). HAX‐PES at different take‐off angles of photoelectrons made it clear that etching by inductively coupled plasma (ICP) introduced donor‐like states in a surface layer of GaN. We were able to quantitatively analyze band bending and charge distribution in an etched p‐GaN. The analysis results indicated the existence of deep donors with a concentration of 1–2 × 10 20 cm −3 in a surface layer whose thickness increased with increasing a bias power of ICP.