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Properties of monolithic InGaN quantum dot pillar microcavities
Author(s) -
Sebald K.,
Seyfried M.,
Kalden J.,
Dartsch H.,
Tessarek C.,
Aschenbrenner T.,
Figge S.,
Kruse C.,
Hommel D.,
Florian M.,
Jahnke F.,
Gutowski J.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201000943
Subject(s) - quantum dot , pillar , materials science , planar , optoelectronics , epitaxy , nitride , transfer matrix , nanotechnology , layer (electronics) , computer science , computer graphics (images) , structural engineering , engineering , computer vision
InGaN quantum dots were successfully implemented into fully epitaxially grown nitride‐based monolithic microcavities (MCs). The discrete modes of airpost pillar MCs prepared out of the planar sample are shown in microreflectivity as well as in microphotoluminescence. These measurements are compared to theoretical simulations based on a vectorial‐transfer matrix method. Quality factors of up to 280 have been achieved and the emission of a single quantum dot was traced up to a temperature of 125 K.