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Continuous wavelength modulation of semi‐polar plane InGaN/GaN MQWs based on vapor‐phase‐diffusion‐based selective‐area pyramidal growth
Author(s) -
Fujiwara Tatsuki,
Nakano Yoshiaki,
Sugiyama Masakazu
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201000942
Subject(s) - materials science , wavelength , polar , modulation (music) , optoelectronics , quantum well , diffusion , phase (matter) , optics , quantum confined stark effect , chemistry , physics , laser , organic chemistry , astronomy , acoustics , thermodynamics
We have achieved continuous wavelength modulation from InGaN quantum wells on semi‐polar {11–22} planes with selective‐area growth of hexagonal pyramids with varied widths of masks surrounding them. The thickness of InGaN wells on the surface of the pyramids was tailored by the mask width, which led to wavelength modulation. The use of semi‐polar planes reduced quantum confined stark effect, allowing a wider range of wavelength modulation: from 446 to 500 nm as measured by cathode luminescence.