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Effect of lateral vapor phase diffusion during the selective growth of InGaN/GaN MQW on semipolar and nonpolar GaN stripes
Author(s) -
Tanikawa Tomoyuki,
Honda Yoshio,
Yamaguchi Masahito,
Amano Hiroshi
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201000907
Subject(s) - metalorganic vapour phase epitaxy , materials science , indium , facet (psychology) , diffusion , vapor phase , epitaxy , optoelectronics , phase (matter) , enhanced data rates for gsm evolution , luminescence , ridge , quantum well , optics , nanotechnology , laser , chemistry , layer (electronics) , computer science , psychology , social psychology , telecommunications , big five personality traits , thermodynamics , physics , organic chemistry , personality , biology , paleontology
We investigated the InGaN/GaN multiple quantum well (MQW) thickness and cathode luminescence (CL) distribution on nonpolar (11–20)GaN, semipolar (11–22)GaN, and (1–101)GaN microstripes grown by selective metal‐organic vapor phase epitaxy (MOVPE) on patterned Si substrates. All samples exhibited ridge growth. To clarify the effect of vapor phase diffusion, the two‐dimensional diffusion equation was solved. The results were in good agreement with the thickness distribution on the (11–20)GaN stripe when we assumed D / k 0 to be 1 µm. However, the results were not in agreement for the semipolar case. On the semipolar face, the surface migration length might be greater, thus increasing the thickness nonuniformity. CL analysis indicated a uniform indium composition on the (11–20) and (11–22) faces. On the (1–101)GaN stripe, the indium composition decreased near the (0001) edge. Excess Ga is considered to affect the compositional nonuniformity on the (1–101) facet.