Premium
Enhancement‐mode AlGaN/GaN HEMT and MIS‐HEMT technology
Author(s) -
Chen Kevin J.,
Zhou Chunhua
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201000631
Subject(s) - high electron mobility transistor , amplifier , materials science , optoelectronics , mode (computer interface) , heterojunction , semiconductor , gallium nitride , electrical engineering , computer science , engineering physics , electronic engineering , transistor , engineering , nanotechnology , cmos , voltage , layer (electronics) , operating system
AlGaN/GaN heterostructure devices are capable of delivering high‐frequency power amplifiers and power switches with performances far superior than those offered by the mainstream silicon technology and other advanced semiconductor technologies. Primarily driven by applications' need, the last few years have witnessed major effort in the development of AlGaN/GaN enhancement‐mode (E‐mode) HEMTs and MIS‐HEMT. This paper attempts to review the latest progresses in this technology, including alternative approaches and device characteristics. Application examples of the E‐mode HEMT technology are also discussed.