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Progress towards III‐nitrides HEMTs on free‐standing diamond substrates for thermal management
Author(s) -
Trejo Manuel,
Jessen Gregg H.,
Chabak Kelson D.,
Gillespie James K.,
Crespo Antonio,
Kossler Mauricio,
Trimble Virginia,
Langley Derrick,
Heller Eric R.,
Claflin Bruce,
Walker Dennis E.,
Poling Brian,
Gilbert Ryan,
Via Glen D.,
Hoelscher John,
Roussos Jason,
Ejeckam Felix,
Zimmer Jerry
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201000601
Subject(s) - diamond , materials science , wafer , optoelectronics , chemical vapor deposition , thermal conductivity , silicon , silicon carbide , material properties of diamond , nanotechnology , high electron mobility transistor , layer (electronics) , transistor , composite material , electrical engineering , voltage , engineering
In this paper, we discuss the progress in the application of silicon‐on‐diamond (SOD) and chemically vapour deposited (CVD) diamond wafers as an alternative solution to silicon and silicon carbide (SiC) substrates to enhance heat dissipation away from the active region of AlGaN/GaN high electron mobility transistors (HEMT) while decreasing thermal degradation due to thermal effects. The superior thermal conductivity and insulating properties of polycrystalline diamond (8–15 Wcm/K) free‐standing wafers have demonstrated certain advantages, mostly evident in the device performance and reliability. Two unique diamond growth applications engineered by sp 3 Diamond Technologies Inc., and Group4 Labs Inc., are discussed and device performance data is presented from early attempts to our most current device research efforts. As single‐crystalline diamond wafers (∼20 Wcm/K) become more accessible and affordable, it is expected to see significant improvement over the current state of this technology.Group4 employs an atomic bonding process of the AlGaN/GaN layers onto a polycrystalline CVD diamond wafer while sp 3 grows the AlGaN/GaN layers on a thin silicon template layer which covers the diamond.