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High‐speed and low‐noise AlInN/GaN HEMTs on SiC
Author(s) -
Sun Haifeng,
Alt Andreas R.,
Benedickter Hansruedi,
Feltin Eric,
Carlin JeanFrançois,
Gonschorek Marcus,
Grandjean Nicolas,
Bolognesi C. R.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201000518
Subject(s) - materials science , optoelectronics , transistor , high electron mobility transistor , noise figure , capacitance , noise (video) , microwave , gallium nitride , wide bandgap semiconductor , electrical engineering , cmos , nanotechnology , physics , layer (electronics) , telecommunications , computer science , electrode , amplifier , voltage , engineering , quantum mechanics , artificial intelligence , image (mathematics)
A comparison of devices with different source–drain gaps has been performed on AlInN/GaN high electron mobility transistors (HEMTs) grown on SiC. The cut‐off frequency is effectively improved through shrinking source drain space and reducing gate parasitic capacitance. Our devices feature an f T of 188 GHz and f MAX of 200 GHz, which is the highest f MAX ever achieved to date for AlInN‐based HEMTs. At 10 (20) GHz, our HEMTs exhibit a low minimum noise figure F min of 0.62 (1.5) dB together with a high associated gain G A of 15.4 (13.3) dB. These F min values are among the lowest reported for deep submicrometer GaN HEMTs, and the G A are the best values so far in the literature, demonstrating the tremendous potential of AlInN/GaN HEMTs for microwave low‐noise applications.