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Fabrication of ultra‐high‐density InAs quantum dots using the strain‐compensation technique
Author(s) -
Akahane Kouichi,
Yamamoto Naokatsu,
Kawanishi Tetsuya
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201000432
Subject(s) - quantum dot , fabrication , materials science , photoluminescence , optoelectronics , strain (injury) , compensation (psychology) , layer (electronics) , nanotechnology , medicine , psychology , alternative medicine , pathology , psychoanalysis
Highly‐stacked InAs quantum dots (QDs) were successfully grown on InP(311)B substrates using a novel strain‐compensation technique. The number of stacked layer was increased to 300, the density of the QDs reaches 2 × 10 13 /cm 2 ; this value cannot be obtained using conventional QD fabrication techniques. In a highly stacked sample, the QDs show good size uniformity with a lateral and vertical ordered structure. In addition, this sample exhibits strong 1.55 µm photoluminescence (PL) emission at room temperature.