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Light emission and floating gate memory characteristics of germanium nanocrystals
Author(s) -
Das Samaresh,
Manna Santanu,
Singha Rajkumar,
Anopchenko Aleksei,
Daldosso Nicola,
Pavesi Lorenzo,
Dhar Achintya,
Ray Samit Kumar
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201000408
Subject(s) - electroluminescence , materials science , nanocrystal , optoelectronics , germanium , flash memory , capacitance , quantum dot , trapping , electron , nanotechnology , chemistry , silicon , physics , electrode , ecology , layer (electronics) , quantum mechanics , computer science , biology , operating system
We report Ge nanocrystals (NCs) based dual functional light emitting and metal insulator semiconductor (MIS) flash memory devices, fabricated by rf sputtering. Transmission electron micrographs revealed the formation of spherically shaped Ge NCs. We have observed broad electroluminescence (EL) around 760 nm, which is attributed to electron–hole recombination in quantum confined Ge NCs. The dependence of integrated EL intensity on drive currents has also been studied. An anti‐clockwise hysteresis behaviour is observed in capacitance–voltage measurements of MIS devices for different sweep voltages, indicating net electron trapping in NC based floating gates.