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Single‐photon detection by Si single‐electron FETs
Author(s) -
Tabe Michiharu,
Udhiarto Arief,
Moraru Daniel,
Mizuno Takeshi
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201000385
Subject(s) - dopant , quantum dot , silicon on insulator , quantum tunnelling , doping , optoelectronics , materials science , electron , photon , silicon , mosfet , physics , transistor , optics , quantum mechanics , voltage
We have demonstrated that Si single‐electron SOI‐MOSFETs with multidots channel have attractive new functions such as single‐photon detection. Multidots formed by nanoscale selective oxidation of thin SOI layer have been used for photon detection. Most recently, we have investigated photon detection capabilities of FETs having phosphorus (P)‐doped channel. In such P‐doped FETs, each P donor works as a quantum dot for electrons and single‐electron transport is achieved by tunnelling through donor potentials. Using such P‐doped FETs, single‐photon detection has been demonstrated. Furthermore, in order to directly observe the spatial landscape of even a single‐dopant potential, we have developed low‐temperature‐Kelvin probe force microscopy (LT‐KFM) and succeeded in detecting a single‐dopant potential in the channel region. In this paper, we present results of photon‐induced random telegraph signals in crystalline‐dot‐type and donor‐dot‐type multidot single‐electron SOI‐MOSFETs, and direct observation of a single‐dopant potential by LT‐KFM.