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Structure and electronic properties of trivacancy and trivacancy‐oxygen complexes in silicon
Author(s) -
Markevich V. P.,
Peaker A. R.,
Hamilton B.,
Lastovskii S. B.,
Murin L. I.,
Coutinho J.,
Torres V. J. B.,
Dobaczewski L.,
Svensson B. G.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201000265
Subject(s) - deep level transient spectroscopy , acceptor , silicon , bistability , oxygen , planar , density functional theory , electron , chemistry , materials science , crystallography , atomic physics , computational chemistry , condensed matter physics , physics , optoelectronics , computer graphics (images) , organic chemistry , quantum mechanics , computer science
We have recently found that the silicon trivacancy (V 3 ) is a bistable defect that can occur in fourfold coordinated and (110) planar configurations for both the neutral and singly negative charge states [V. P. Markevich et al., Phys. Rev. B 80 , 235207 (2009)]. Acceptor levels of V 3 in both these configurations have been determined. It has also been shown that at T > 200 °C, the interaction of mobile trivacancies with interstitial oxygen atoms results in the formation of V 3 O complex with the first and second acceptor levels at E c −0.46 and −0.34 eV. In the present work we identify donor levels arising from V 3 and V 3 O complexes by means of deep level transient spectroscopy (DLTS) and high‐resolution Laplace DLTS on n + p silicon structures irradiated with 6 MeV electrons, combined with density functional modeling studies. It is found that both defects possess two donor levels in the (110) planar configurations. First donor levels at E v +0.19 and +0.235 eV, and the second donor levels at E v +0.105 and +0.12 eV are found for the V 3 and V 3 O complexes, respectively.