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Modelling lifetime degradation in boron‐doped Czochralski silicon
Author(s) -
Voronkov Vladimir V.,
Falster Robert,
Batunina Anna V.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201000191
Subject(s) - boron , silicon , recombination , doping , materials science , electron , atom (system on chip) , atomic physics , oxygen , range (aeronautics) , degradation (telecommunications) , dimer , optoelectronics , chemistry , physics , electronic engineering , nuclear physics , computer science , biochemistry , organic chemistry , composite material , gene , embedded system , engineering
Electron lifetime in boron‐ and oxygen‐containing silicon is known to decrease under illumination. The emerging recombination centre was previously thought to be a complex B s O 2 , of a substitutional boron atom and an oxygen dimer. However this attribution has turned out to be inconsistent with recently published data. A new model was proposed, based on a latent single‐positive complex B i O 2 that involves an interstitial boron atom B i rather than B s . Excess electrons lead to recharging the latent B i O 2 centre into the neutral state, with subsequent reconstruction into recombination‐active configuration. This model was used to simulate the reported data on production of recombination centres, in a wide range of applied illumination intensity – and found to provide a good reproduction of the data.