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Determination of carrier diffusion coefficient and lifetime in single crystalline CVD diamonds by light‐induced transient grating technique
Author(s) -
Malinauskas T.,
Jarašiūnas K.,
Ivakin E.,
Tranchant N.,
Nesladek M.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201000100
Subject(s) - ambipolar diffusion , thermal diffusivity , diffusion , grating , materials science , carrier lifetime , transient (computer programming) , diamond , electron , electron mobility , band gap , molecular physics , chemistry , analytical chemistry (journal) , optics , optoelectronics , thermodynamics , silicon , physics , chromatography , quantum mechanics , computer science , composite material , operating system
We report on a contactless, all‐optical study of carrier diffusion and recombination kinetics in single‐crystalline diamond layers using the light‐induced transient grating (LITG) technique. Decay times of transient diffraction grating yielded carrier lifetime of τ R ≈ 3 ns and bipolar diffusion coefficient D a = 12 cm 2 /s at 300 K. The latter value of D a was found to be 4–5 times lower than the ambipolar diffusivity based on electron and hole mobilities, measured by photo‐electrical time‐of‐flight (ToF) technique. This discrepancy was attributed to the bandgap renormalization at high excess carrier densities and its impact on carrier diffusion. The significant decrease of low temperature diffusivity pointed out to a contribution of many‐body effects which are tentatively attributed to the formation of electron–hole liquid (EHL) at T < 150 K.