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Numerical simulation of copper filling within mesoporous silicon by electrodeposition
Author(s) -
Fukami Kazuhiro,
Chourou Mohamed L.,
Sakka Tetsuo,
Ogata Yukio H.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201000087
Subject(s) - mesoporous material , materials science , copper , silicon , porous silicon , electrochemistry , electrode , porous medium , porosity , metal , ion , diffusion , chemical engineering , composite material , metallurgy , chemistry , thermodynamics , catalysis , biochemistry , physics , organic chemistry , engineering
A model of metal electrodeposition within mesoporous silicon is proposed. The model is based on the coupled map lattice model, which includes diffusion of metal ions, electrode shape, equivalent circuit of electrochemical cell, and potential drop in porous silicon wall. Continuous filling from the pore bottom to the opening and plugging at the pore opening were successfully reproduced using the present model. By analyzing the concentration profile of cupric ions in solution, the mechanism of plugging at the pore opening and discontinuous filling by electrodeposition is discussed.