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Integration of RF inductors and filters on mesoporous silicon isolation layers
Author(s) -
Billoué Jérôme,
Gautier Gaël,
Ventura Laurent
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201000027
Subject(s) - materials science , silicon , inductor , resistive touchscreen , substrate (aquarium) , optoelectronics , mesoporous material , capacitor , capacitive sensing , nanotechnology , electrical engineering , engineering , chemistry , biochemistry , oceanography , voltage , geology , catalysis
In this paper, we present electrochemical etching conditions to obtain thick mesoporous silicon electrical insulating layers for RF applications from high resistivity substrates (30–50 Ω cm). We present the realization and the characterization of spiral inductors on thick mesoporous silicon layers. Indeed, PSi layers reduce significantly the resistive and capacitive losses of the substrate, so, quality factor and resonant frequencies are improved for integrated inductors. In complement, we develop the integration of such devices in notch filters and we show the first measurement results on 100 µm thick mesoporous silicon layers.