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Kinetics of electron induced desorption of hydrogen in nanostructured porous silicon
Author(s) -
Ruano G. D.,
Ferron J.,
Arce R. D.,
Koropecki R. R.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201000015
Subject(s) - desorption , hydrogen , silicon , materials science , kinetics , thermal desorption , electron , chemical physics , porous silicon , activation energy , atomic physics , chemistry , adsorption , optoelectronics , physics , organic chemistry , quantum mechanics
We found that nanostructured porous silicon obtained by anodization desorbs hydrogen under electron bombardment. The kinetics of this electron‐induced effusion can be explained neither in terms of thermal processes nor by direct transference of energy from the impinging electron to the SiH bonds. We show that short lived‐large energy fluctuations (SLEFs), occurring during bimolecular recombination processes of carriers produce both, a midgap increment of the density of electronic defect states and hydrogen desorption.