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Effect of deposition temperature on the physical properties of RF magnetron sputtered Ag–Cu–O films with various Cu to Ag ratios
Author(s) -
Uthanna S.,
Reddy M. Hari Prasad,
Boulet P.,
Petitjean C.,
Pierson J. F.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983773
Subject(s) - analytical chemistry (journal) , materials science , copper , band gap , sputter deposition , substrate (aquarium) , sputtering , thin film , electrical resistivity and conductivity , oxide , silver oxide , copper oxide , cavity magnetron , metal , metallurgy , chemistry , nanotechnology , optoelectronics , oceanography , engineering , organic chemistry , chromatography , geology , electrical engineering
Thin films of Ag–Cu–O were deposited on glass substrates held at various temperatures in the 303–523 K range by RF magnetron sputtering of Ag 90 Cu 10 , Ag 80 Cu 20 and Ag 70 Cu 30 , and elemental copper and silver targets in an oxygen partial pressure of 2 × 10 −2 Pa and sputtering pressure of 4 Pa. The deposited films were characterised by energy dispersive X‐ray analysis, X‐ray diffraction (XRD), atomic force microscopy, UV–Vis–NIR spectroscopy and employing four‐point probe method. The atomic ratio of Cu/Ag in the films formed at 303 K was in correlation with the composition of the starting sputter targets. The increase in substrate temperature induced the decomposition of the Ag–Cu–O films into a mixture of metallic silver and copper oxide. The electrical resistivities of silver oxide and copper oxide films formed at 303 K were 3 × 10 −3 Ω cm and 29 Ω cm, respectively. The electrical resistivity of the films formed with Ag 70 Cu 30 target at 303 K was 8.2 Ω cm and it decreased to 2.4 Ω cm with increase in substrate temperature to 523 K due to structural changes in the films. The optical band gap of the Ag–Cu–O films formed at 303 K increased from 1.60 to 1.95 eV with the increase of copper to silver atomic ratio from 0.10 to 0.30 in the films. The optical band gap of the films formed with Ag 70 Cu 30 target increased from 1.95 to 2.15 eV with the increase in substrate temperature from 303 to 523 K, respectively.