Premium
Transparent semiconducting oxides: materials and devices
Author(s) -
Grundmann Marius,
Frenzel Heiko,
Lajn Alexander,
Lorenz Michael,
Schein Friedrich,
von Wenckstern Holger
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983771
Subject(s) - optoelectronics , materials science , mesfet , ohmic contact , transistor , electronic circuit , misfet , inverter , voltage , nanotechnology , electrical engineering , layer (electronics) , field effect transistor , engineering
Transparent conductive oxides (TCOs) are a well‐known material class allowing Ohmic conduction. A large free carrier concentration in the 10 21 cm −3 range and high conductivity (beyond 10 4 S/cm) is feasible simultaneously with high transparency. Applications are manifold and include touch screens and front contacts for displays or solar cells. Transparent semiconducting oxides (TSO) are oxides with an intermediate free carrier concentration (typically 10 14 –10 18 cm −3 ) allowing the formation of depletion layers. We review recent results on TSO‐based transistors and inverters. Most work has been reported on MISFETs. We show that MESFETs exhibit high performance and low voltage operation of oxide electronics. MESFET‐based inverters offer superior performance compared to results reported for TSO MISFET‐based circuits.Optical image of inverter based on thin film MESFETs with Mg 0.003 Zn 0.997 O channels (left) and experimental inverter characteristic for supply voltage of $V_{{\rm DD}} = + 2.0\;{\rm V}$ (right).