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A new reactive sputtering technique for the low temperature deposition of transparent light emitting ZnS:Mn thin films
Author(s) -
Wakeham Steve,
Thwaites Mike,
Tsakonas Costas,
Cranton Wayne,
Ranson Robert,
Boutaud Gabriel,
Koutsogeorgis Demosthenes
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983757
Subject(s) - materials science , sputtering , electroluminescence , photoluminescence , crystallinity , thin film , wafer , annealing (glass) , optoelectronics , substrate (aquarium) , sputter deposition , deposition (geology) , nanotechnology , composite material , layer (electronics) , paleontology , oceanography , sediment , geology , biology
Abstract The temperature sensitive nature of the substrates used in the flexible displays market necessitates a low temperature deposition technique for processing them. ZnS:Mn exhibiting high intensity photoluminescence (PL) and good crystallinity has been deposited onto Si wafers, glass microscope slides and polymeric substrates using a new reactive sputtering technology referred to as HiTUS. This technique enables very high deposition rates and requires no substrate heating. When incorporated as part of a complete EL device, as‐deposited ZnS:Mn films are seen to exhibit stable electroluminescence on Si, glass and planarised PET substrate materials. Post annealing of the devices on Si and glass at temperatures of up to 600 °C show that the HiTUS films perform better than equivalent ZnS:Mn films deposited using RF magnetron sputtering.