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Atomic and electronic structures at ZnO and ZrO 2 interface for transparent thin‐film transistors
Author(s) -
Wang S. J.,
Wong T. I.,
Chen Q.,
Yang M.,
Wong L. M.,
Chai J. W.,
Zhang Z.,
Pan J. S.,
Feng Y. P.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983756
Subject(s) - heterojunction , materials science , x ray photoelectron spectroscopy , molecular beam epitaxy , density functional theory , epitaxy , electronic structure , photoemission spectroscopy , optoelectronics , thin film , scanning transmission electron microscopy , electronic band structure , transmission electron microscopy , condensed matter physics , nanotechnology , layer (electronics) , chemistry , computational chemistry , physics , nuclear magnetic resonance
In this paper, we report the studies of atomic and electronic structures at ZnO and ZrO 2 interface. The epitaxial heterostructures were grown by laser molecular beam epitaxy and the interface atomic structure was determined by using high‐resolution transmission electron microscopy (TEM). Band alignment for high‐k ZrO 2 layer on ZnO was investigated by in situ X‐ray photoemission spectroscopy (XPS) characterization and first‐principles calculations based on density functional theory (DFT). The valence and conduction band offsets (CBOs) were found to be 0.27 ± 0.05 eV and 2.16 ± 0.05 eV, respectively. The results are in good agreement with values from theoretical calculations. The large CBO and small lattice mismatch between ZnO and ZrO 2 suggest potential for ZrO 2 to be used as a gate dielectric in ZnO‐based transparent electronic devices.