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Effect of nitrogen doping on photoresponsivity of ZnO films
Author(s) -
Ievtushenko A. I.,
Lashkarev G. V.,
Lazorenko V. I.,
Karpyna V. A.,
Dusheyko M. G.,
Tkach V. M.,
Kosyachenko L. A.,
Sklyarchuk V. M.,
Sklyarchuk O. F.,
Avramenko K. A.,
Strelchuk V. V.,
Horvath Zs. J.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983750
Subject(s) - doping , nitrogen , detector , materials science , optoelectronics , task (project management) , nanotechnology , optics , chemistry , physics , organic chemistry , management , economics
Investigations of photoelectrical properties of ZnO films are important scientific task for designing UV detectors for various applications. We report the positive role of nitrogen doping in increasing photoresponsivity of ZnO:N‐based detectors. It is suggested that nitrogen slightly deteriorates the structural quality of ZnO films and compensates intrinsic defects that increase photoresponsivity. Also, the spectral response of Ni/ZnO:N/n + ‐Si structures at different biases were considered.