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Structural, optical and electrical properties of indium–molybdenum oxide thin films prepared by spray pyrolysis
Author(s) -
Parthiban S.,
Elangovan E.,
Ramamurthi K.,
Goncalves G.,
Martins R.,
Fortunato E.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983745
Subject(s) - bixbyite , materials science , indium , doping , thin film , molybdenum , transmittance , electrical resistivity and conductivity , oxide , analytical chemistry (journal) , optoelectronics , metallurgy , nanotechnology , chemistry , engineering , electrical engineering , chromatography
Molybdenum doped indium oxide (IO) thin films were deposited on the Coring F1737 glass substrates at 400 °C by spray pyrolysis technique. The Mo doping was varied between 0 and 4 at.%. The films were characterized by their structural, electrical and optical properties. The films are confirmed to be cubic bixbyite In 2 O 3 with a strongest orientation along (222) for 0.5 at.% Mo, which is shifted to (400) plane when the Mo doping is increased to ≥1.2 at.%. The films deposited with 0.5 at.% Mo showed high mobility of ∼90 cm 2 /Vs, resistivity of ∼6.8 × 10 −4 Ω cm and carrier concentration of ∼1.01 × 10 20 cm −3 with >∼73% transmittance in the visible range between 500 and 800 nm. The transmittance is well extended into near infrared region.