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Electrical characteristics of solution‐processed InGaZnO thin film transistors depending on Ga concentration
Author(s) -
Kim Gun Hee,
Jeong Woong Hee,
Kim Hyun Jae
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983742
Subject(s) - x ray photoelectron spectroscopy , thin film transistor , materials science , ion , transistor , oxygen , optoelectronics , analytical chemistry (journal) , chemical engineering , chemistry , nanotechnology , electrical engineering , voltage , organic chemistry , layer (electronics) , engineering
We investigated the role of Ga in solution‐processed InGaZnO thin film transistors (TFTs). The incorporation of Ga into a InZnO compound system results in a decrease in the carrier concentration of the films and an off‐current of TFTs. This is a result of the Ga ions forming stronger chemical bonds with oxygen, as compared to the Zn and In ions, acting as a carrier suppressor. It was verified, using X‐ray photoelectron spectroscopy (XPS), that the vacancy‐related oxygen 1s peak was decreased when the Ga content increased.