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Properties of strontium copper oxide (SCO) deposited by PLD using the 308 nm laser and formation of SCO/Si heterostructures
Author(s) -
Louloudakis D.,
Varda M.,
Papadopoulou E. L.,
Kayambaki M.,
Tsagaraki K.,
Kambilafka V.,
Modreanu M.,
Huyberechts G.,
Aperathitis E.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983740
Subject(s) - materials science , pulsed laser deposition , amorphous solid , annealing (glass) , crystallite , analytical chemistry (journal) , excimer laser , transmittance , doping , heterojunction , band gap , thin film , laser , optoelectronics , optics , chemistry , nanotechnology , metallurgy , crystallography , physics , chromatography
The XeCl excimer laser (308 nm) was used for depositing p‐type SrCu 2 O 2 (SCO) films by pulsed‐laser deposition (PLD) from undoped and Ba‐doped (6%) SCO targets. The SCO films were deposited at 300 °C on glass and p‐type Si substrates, while the oxygen pressure was kept constant at 5 × 10 −2 Pa and their properties were investigated just after deposition and after annealing at 330 °C in forming gas. The films were amorphous just after deposition but became stoichiometric SrCu 2 O 2 polycrystalline after annealing and very resistive. The Ba‐doped SCO films showed lower transmittance than the undoped ones but for both films the transmittance increased to around 70–80% in the NIR‐IR spectrum. The optical energy gap was found to be around 3.24 eV after annealing. SCO films deposited on p‐Si exhibited rectifying properties, behaving like p − ‐SCO/p‐Si heterojunctions and their I – V and C – V characteristics were examined with temperature. An explanation of the diode behaviour is attempted based on materials properties and heterodiode characteristics.