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Application of capacitance–voltage measurements to the determination of interface roughness in nanoparticulate field‐effect transistors
Author(s) -
Okamura Koshi,
Nikolova Donna,
Mechau Norman,
Hahn Horst
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983737
Subject(s) - materials science , nanocrystalline material , capacitance , dielectric , surface roughness , surface finish , transistor , optoelectronics , capacitor , interface (matter) , semiconductor , field effect transistor , voltage , nanotechnology , electrical engineering , composite material , chemistry , electrode , engineering , capillary number , capillary action
Abstract Solution‐processed inorganic field‐effect transistors (FETs) are mostly composed of nanocrystalline semiconductors as active layers. Since carriers are induced at the interface between the nanocrystalline semiconductor and the dielectric, the roughness at the interface has a significant influence on the performance of the FETs. The interface is, however, buried in the nanocrystalline layer and cannot be accessed from the surface; no quantitative probing methods are available so far. In this article, it is proposed to apply capacitance–voltage ( C – V ) measurements on nanoparticulate capacitors to examine the interface roughness, which enables us to evaluate the correlation between the interface roughness and the performance of nanoparticulate zinc oxide (ZnO) FETs.