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Preparation of ZnO thin film by the sol–gel method using low temperature ozone oxidation
Author(s) -
Ehara Takashi,
Ueno Takaaki,
Abe Junya
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983720
Subject(s) - ozone , oxygen , annealing (glass) , zinc , sol gel , materials science , analytical chemistry (journal) , oxide , thermal oxidation , thermal treatment , thin film , nuclear chemistry , chemistry , metallurgy , chromatography , nanotechnology , organic chemistry , composite material
Zinc oxide thin films have been prepared by the sol–gel method from a 2‐methoxyethanol solution of zinc acetate dihydrate on SiO 2 substrates using air, pure oxygen, and 1% ozone in oxygen as oxygen source. In the cases where air or oxygen was used as the oxygen source for thermal annealing, samples annealed at 600 to 800 °C exhibit a (0002) peak in X‐ray diffraction (XRD). A sample annealed at 700 °C exhibited the highest (0002) peak intensity in conventional thermal annealing. However, the case using 1% ozone in oxygen as the atmosphere presented different results. A sample treated in 1% ozone at 100 °C had peak intensity in XRD (0002) comparable with samples annealed at several hundreds of degree in air or oxygen. This result indicates that the high oxidation efficiency of ozone is useful in decreasing the processing temperature of the sol–gel method.