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Optimization of the contact resistance in the interface structure of n‐type Al/a‐SiC:H by thermal annealing for optoelectronics applications
Author(s) -
Ambrosio Roberto,
Torres Alfonso,
Zuñiga Carlos,
Moreno Mario,
Mireles Jose
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983719
Subject(s) - ohmic contact , materials science , contact resistance , optoelectronics , annealing (glass) , sheet resistance , chemical vapor deposition , fabrication , silicon , amorphous solid , schottky diode , amorphous silicon , wafer , schottky barrier , diode , nanotechnology , composite material , crystalline silicon , crystallography , chemistry , layer (electronics) , medicine , alternative medicine , pathology
The presented work meets the requirements for integration of amorphous silicon carbon films with silicon technology in order to obtain a complete optoelectronic system such as light emitting diodes and its electronic readout circuits. The key enabler for this integration scheme is the low temperature of deposition of a‐SiC:H films and an ohmic behavior in the interface metal/a‐SiC:H. In this work, the optimization of the interface Al/a‐SiC:H films are performed by means of thermal annealing timing. The a‐SiC:H films were deposited by enhanced chemical vapor deposition from CH 4 /SiH 4 and C 2 H 2 /SiH 4 mixtures. The structural and optical properties of the deposited films are presented. An implantation phosphorous dose was used for doping before fabrication of patterned aluminum contacts. The implanted films were electrically characterized by the transfer length method (TLM) measuring a sheet resistance value as low as 171 MΩ/square. The Schottky behavior was improved to ohmic behavior after several hours in thermal annealing treatments at 350 °C, which allows to obtain a reasonable contact resistance values in the range from 8.6 to 26.8 kΩ.