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Performance of top‐gate thin film transistors with solution processed ZnO channel layer and PVP gate dielectric
Author(s) -
Nayak Pradipta K.,
Kim Jinwoo,
Lee Changhee,
Hong Yongtaek
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983714
Subject(s) - thin film transistor , materials science , gate dielectric , optoelectronics , annealing (glass) , fabrication , dielectric , saturation (graph theory) , layer (electronics) , field effect , threshold voltage , transistor , nanotechnology , electrical engineering , composite material , voltage , alternative medicine , mathematics , engineering , pathology , combinatorics , medicine
The performance of top‐gate thin film transistors with solution processed zinc oxide (ZnO) channel layer and poly(4‐vinylphenol) (PVP) gate dielectric have been investigated. The transparency of the PVP film was more than 80% in the visible region, indicating that PVP can be used as a potential dielectric layer for transparent electronics. The TFTs with as‐prepared ZnO as the channel layer showed a saturation field effect mobility of 6.4 × 10 −3 cm 2 /Vs with an on/off ratio of 30. The performances of the TFTs were enhanced after oxygen annealing of the ZnO channel layer prior to PVP deposition. The TFTs with 1 h oxygen annealed ZnO as the channel layer showed a saturation mobility of 0.05 cm 2 /Vs with an on/off ratio of 2.1 × 10 2 . The obtained results are encouraging for fabrication of all solution processed ZnO based TFTs for cost effective technological applications.