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Annealing effect on the structural, opto‐electronic and photoluminescence properties of sprayed Zn 0.76 Mg 0.24 O films for application in solar cells
Author(s) -
Prathap P.,
Suryanarayana Reddy A.,
Revathi N.,
Venkata Subbaiah Y. P.,
Ramakrishna Reddy K. T.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983713
Subject(s) - annealing (glass) , photoluminescence , materials science , argon , atmospheric temperature range , analytical chemistry (journal) , chemical engineering , optoelectronics , metallurgy , chemistry , physics , thermodynamics , environmental chemistry , organic chemistry , engineering
In recent years, Zn 1− x Mg x O has attracted the attention of many researchers as its physical behaviour can be suitably controlled by varying the Zn/Mg ratio. The superior advantages associated with Zn 1− x Mg x O make this material as a potential candidate for application in Cu(InGa)Se 2 ‐based solar cells. In the present investigation, Zn 1− x Mg x O films have been prepared by spray pyrolysis at 300 °C and subsequently annealed in argon and oxygen ambience at temperatures that vary in the range, 100–500 °C. The changes occurred in the physical characteristics of the layers as a function of annealing temperature have been studied. The influence of annealing on the structure, topography, opto‐electronic and photoluminescence properties was found to be significant. The results have been presented and discussed.