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Transparent and conductive undoped zinc oxide thin films grown by atomic layer deposition
Author(s) -
Luka Grzegorz,
Krajewski Tomasz,
Wachnicki Lukasz,
Witkowski Bartlomiej,
Lusakowska Elzbieta,
Paszkowicz Wojciech,
Guziewicz Elzbieta,
Godlewski Marek
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983709
Subject(s) - atomic layer deposition , materials science , electrical resistivity and conductivity , zinc , thin film , stoichiometry , layer (electronics) , deposition (geology) , transparent conducting film , diethylzinc , doping , conductivity , analytical chemistry (journal) , electrical conductor , nanotechnology , chemical engineering , mineralogy , optoelectronics , metallurgy , composite material , chemistry , paleontology , biochemistry , organic chemistry , enantioselective synthesis , sediment , electrical engineering , biology , engineering , catalysis , chromatography
Atomic layer deposition (ALD) was used to fabricate transparent and conductive thin films of ZnO. Two hundred‐nano metre thick ZnO films were deposited on glass substrates at low growth temperatures varied between 120 and 240 °C. As zinc and oxygen precursors we used diethylzinc (DEZn) and deionized water, respectively. To find optimal film parameters, the structure, surface morphology, optical and electrical measurements were carried on. The films obtained at 200 °C show the highest carrier concentration (∼10 20 cm −3 ) and the lowest resistivity (2 × 10 −3 Ω cm). The films exhibit mobilities up to 37 cm 2 /Vs that we associate to the process technology used. An important point of our approach was that the films studied were not intentionally doped (with Al or other group III elements) but the high electrical conductivity was achieved by playing with the sample stoichiometry and growth conditions.