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Effect of the deposition rate on ITO thin film properties prepared by ion beam assisted deposition (IBAD) technique
Author(s) -
Meng LiJian,
Teixeira V.,
dos Santos M. P.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983704
Subject(s) - deposition (geology) , materials science , ion beam assisted deposition , transmittance , thin film , indium tin oxide , ion plating , ion beam , analytical chemistry (journal) , pulsed laser deposition , optoelectronics , ion , optics , chemistry , nanotechnology , paleontology , organic chemistry , chromatography , sediment , biology , physics
Indium tin oxide (ITO) thin films have been deposited onto glass substrates at room temperature by ion beam assisted deposition technique at different deposition rates (0.1–0.3 nm/s). The effects of the deposition rate on the structural, optical and electrical properties of the deposited films have been studied. The optical constants of the deposited films were calculated by fitting the transmittance spectra using the semi‐quantum model. Considering the application for the electromagnetic wave shielding which needs a high IR reflectance, the optimising deposition rate is 0.2 nm/s. The films prepared at this deposition rate shows a relative high IR reflectance (60%), a good electrical conductivity (5 × 10 −3 Ω cm), and a reasonable transmittance in the visible region (over 80%).