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Structural characterization of thick (11 2 2) GaN layers grown by HVPE on m ‐plane sapphire
Author(s) -
Usikov Alexander,
Soukhoveev Vitali,
Shapovalov Lisa,
Syrkin Alexander,
Ivantsov Vladimir,
Scanlan Bernard,
Nikiforov Alexey,
Strittmatter Andre,
Johnson Noble,
Zheng JianGuo,
Spiberg Philippe,
ElGhoroury Hussein
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983655
Subject(s) - materials science , sapphire , optoelectronics , metalorganic vapour phase epitaxy , lasing threshold , dislocation , characterization (materials science) , heterojunction , stacking , wavelength , epitaxy , laser , bar (unit) , optics , layer (electronics) , nanotechnology , composite material , chemistry , physics , organic chemistry , meteorology
This paper reports structural characterization of thick $(11\bar {2}2)$ ‐oriented GaN layers by means of XRD, TEM, and micro‐ CL. The semi‐polar $(11\bar {2}2)$ GaN layers were grown on m ‐plane sapphire substrates by HVPE. Their structural quality improved with thickness. Threading dislocation density of 3 × 10 8 cm −2 and stacking faults density of 4 × 10 4 cm −1 were measured at the surface of 20 µm thick $(11\bar {2}2)$ GaN layers. The semi‐polar GaN layers were used as template substrates to grow InGaN/GaN MQW heterostructures by MOCVD that demonstrated optically pumped lasing at 500 nm wavelength. The results demonstrate the longest wavelength yet reported for a photo‐pumped laser on template substrates.
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