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The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD
Author(s) -
Durkaya G.,
Buegler M.,
Atalay R.,
Senevirathna I.,
Alevli M.,
Hitzemann O.,
Kaiser M.,
Kirste R.,
Hoffmann A.,
Dietz N.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983622
Subject(s) - molar ratio , morphology (biology) , materials science , molar , surface roughness , chemical vapor deposition , surface finish , group (periodic table) , analytical chemistry (journal) , mineralogy , chemical engineering , composite material , chemistry , nanotechnology , catalysis , organic chemistry , engineering , medicine , genetics , dentistry , biology
The influence of the group V/III molar precursor ratio on the surface morphological and electrical properties of In 0.65 Ga 0.35 N epilayers has been investigated. The layers studied have been grown by high‐pressure chemical vapor deposition, a growth technique that utilizes the reactor pressure as an additional processing parameter. The surface morphology analysis revealed that with the increasing V/III molar precursor ratio, the surface morphology degrades with increasing surface roughness and decreasing average grain areas. The free carrier concentration in the In 0.65 Ga 0.35 N epilayers increased with the increased group V/III molar precursor ratios in the 700–3000 range.