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Selectivity enhancement by hydrogen addition in selective area metal‐organic vapor phase epitaxy of GaN and InGaN
Author(s) -
Shioda Tomonari,
Sugiyama Masakazu,
Shimogaki Yukihiro,
Nakano Yoshiaki
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983606
Subject(s) - metalorganic vapour phase epitaxy , indium , materials science , nucleation , epitaxy , optoelectronics , chemical vapor deposition , selectivity , photoluminescence , layer (electronics) , phase (matter) , hydrogen , crystal (programming language) , wavelength , diffusion , nanotechnology , chemistry , catalysis , biochemistry , physics , organic chemistry , thermodynamics , computer science , programming language
Selective area metal‐organic vapor phase epitaxy (SA‐MOVPE) allows in‐plane control of layer composition and thickness. The use of relatively wide (>10 µm) selective masks brings about large wavelength modulation, taking advantage of vapor‐phase diffusion of precursors. The wide masks, however, tend to induce nucleation on them, leading to much reduced and uncontrollable wavelength modulation. To obtain deposition selectivity between masks and crystal surface, hydrogen addition was proved to be effective by preventing GaN nucleation on masks. Consequently, the maximum growth rate enhancement of 4.8 and the photoluminescence peak shift of 54 nm (nominally 11% shift in the indium composition) were achieved for InGaN bulk layer.