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GaN/AlGaN nanostructures for intersubband optoelectronics
Author(s) -
Tchernycheva M.,
Macchadani H.,
Nevou L.,
Mangeney J.,
Julien F. H.,
Kandaswamy P. K.,
Wirthmüller A.,
Monroy E.,
Vardi A.,
Schacham S.,
Bahir G.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200983565
Subject(s) - optoelectronics , materials science , wavelength , photodetector , ultrashort pulse , excited state , saturation (graph theory) , cascade , absorption (acoustics) , laser , optics , physics , chemistry , atomic physics , mathematics , combinatorics , chromatography , composite material
We have investigated intraband absorptions in GaN/AlN QDs for ultrafast all‐optical switching applications at telecommunication wavelengths. Using time‐resolved pump‐probe experiments the electron lifetime in the excited state of the QDs is measured to be 165 fs. Intraband absorption saturation experiments reveal a record low switching energy. We then investigate quantum cascade ISB photodetectors based on GaN/AlGaN QWs and show that mesa devices with 17 × 17 µm 2 size provide a frequency response above 10 GHz at 1.5 µm wavelength.